Excitonic emission in vertical-cavity structure and oxide-confined surface-emitting lasers with buried structures

We have grown vertical-cavity surface-emitting laser (VCSEL) structures consisted of Al(Ga)As/GaAs distributed Bragg reflectors and InGaAs/GaAs quantum wells by metalorganic chemical-vapor deposition. The spontaneous emission from the InGaAs/GaAs quantum well in the vertical-cavity structure was investigated by changing the mirror reflectivity and the temperature. We have also fabricated buried structure VCSELs with an oxide current aperture formed by selective oxidation of AlAs. The measured reflectivity spectra showed that the as-grown VCSEL structures were well grown with the desired optical thicknesses. Threshold currents of 1.2 mA and optical powers greater than 1.0 mW were measured for an 8-mu m-square VCSEL.