III-V MOSFET Structure ( InP/InAs/InGaAs) I-V Characteristics Using Silvaco TCAD Simulator

S. Ammi,A. Aissat,N. Wichmann,S. Bollaert

Lecture Notes in Electrical Engineering（2019）

Univ Blida 1 | Univ Sci & Technol Lille 1

Cited 2|Views6

Abstract

Our work is used to investigate the electrical proprieties of III-V MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from an InP/InAs/InGaAs structure. This simulation is done using Silvaco TCAD tools. We solve the coupled Poisson-Schrodinger equation that gives the carriers concentration and their eigen state energies at each level. The fundamental equations are based on the conventional drift-diffusion model of charge transport with Fermi-Dirac statistics and electric field-dependent mobility model. We present the charge control in channel and the complete I-V characteristics of InP/InAs/InGaAs MOSFET. The results obtained show the output Id-Vds and the transfer Id-Vgs characteristic with Lg = 50 nm and To x = 4 nm. Ion of 330 mA/mm and maximum transconductance Gm of 405 mS/mm were calculated at Vd = 0.05 V. The transfer and Gm characteristics of this structure are shown with Lg of 150 nm and 100 nm respectively. Ion and Gm,ma,, reach to (270-280) mA/mm and (328-346) mS/mm respectively. It is found that the threshold voltage decreases as the channel length is reduced.

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Key words

III-V,semiconductor,InAs-MOSFET,Poissson-Shrodinger equation,Silvaco-TCAD

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