The comparison of NMOS devices with Al interconnect and Cu interconnect

NMOSFET characteristics for Al and Cu interconnect were compared in a device point of view. The NMOS device was fabricated with conventional 0.18mum Cu or Al processes. Cu interconnect had not influence on both oxide and junction characteristics but affect on the channel region to result in threshold voltage shift about -0.05V. Cu interconnect device had the lower interface traps than Al interconnect device The mobility of transistor with Cu interconnection was better than that with Al interconnection.