N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE (電子部品・材料)Kiattiwut PRASERTSUK,Tomoyuki TANIKAWA,Takeshi KIMURA,Shigeyuki KUBOYA,Tetsuya SUEMITSU,Takashi MATSUOKA電子情報通信学会技術研究報告= IEICE technical report: 信学技報(2017)引用 0|浏览12暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要