Plasma Parameters and Etching Characteristics of SiOxNy Films in CF4 + O2 + X (X = C4F8 or CF2Br2) Gas Mixtures

In this work, we carried out the study of CF4 + O2 + X (X = C4F8 or CF2Br2) gas chemistries in respect to the SiOxNy reactive-ion etching process in a low power regime. The interest in the liquid CF2Br2 as an additive component is motivated by its generally unknown plasma etching performance. The combination of various diagnostic tools (double Langmuir probe, quadrupole mass-spectrometry, X-ray photoelectron spectroscopy) allowed us to compare the effects of CF4/X mixing ratio, input power and gas pressure on gas-phase plasma characteristics as well as to analyze the SiOxNy etching kinetics in terms of process-condition-dependent effective reaction probability. It was found that the given gas systems are characterized by: (1) similar changes in plasma parameters (electron temperature, ion current density) and fluxes of active species with variations in processing conditions; (2) identical behaviors of SiOxNy etching rates, as determined by the neutral-flux-limited process regime; and (3) non-constant SiOxNy + F reaction probabilities due to changes in the polymer deposition/removal balance. The features of CF4 + CF2Br2 + O2 plasma are lower polymerization ability (due to the lower flux of CFx radicals) and a bit more vertical etching profile (due to the lower neutral/charged ratio).