Effective Width Modeling for Body-Contacted Devices in Silicon-On-Insulator Technology

Effective width of a body-contacted MOSFET depends on the width offset, which comes from the specific layout one needs in Silicon-on-Insulator technology to contact the body node of these devices. This paper demonstrates and models the length dependence of the mentioned width-offset for 0.18 mu m technology. The length dependence of width-offset is demonstrated by a simple technique of comparing linear currents of identical body-contacted and floating-body device for thick-oxide devices. Similar demonstration for thin-oxide devices is done by comparing maximum linear transconductance (peak g(m)) of identical body contacted and floating body devices. This work then goes on to model this phenomenon semi-empirically. The improvement in the fits obtained with the proposed model over existing model validates it.