High Voltage MOSFET Compact Modeling

Ehrenfried Seebacher,Biswanath Senapati,Kund Molnar, Walter Pflanzl,Werner Posch,Alexander Steinmair,Mingchun Tang,Nikos Mavredakis

NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2（2011）

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摘要

This article presents state-of-the-art high-voltage (HV) transistor compact models and new developments. After a short look into the laterally diffused metal-oxide semiconductor (LDMOS) transistor physics, an overview of the main HV transistor compact models is given. HV transistor modeling with BSIM sub-circuits as well as analytical models like EKV HV and HiSIM_HV is discussed in detail.

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关键词

Compact modeling,LDMOS,LDMOS Sub circuit,EKV-HV,HiSIM_HV,parasitic modeling,1/f noise modeling

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