Two-Dimensional Direct Semiconductor Boron Monochalcogenide Gamma-Bte: Room-Temperature Single-Bound Exciton And Novel Donor Material In Excitonic Solar Cells

Recently, excitonic solar cells (XSCs) with high photovoltaic performance have raised research interests because of their high power conversion efficiencies (PCEs). Herein, by using first-principles calculations, we predict that gamma-BX (X = S, Se, Te) monolayers are direct semiconductors with the band gaps of 2.94, 2.71, and 1.32 eV, respectively, and maintain semiconduction in the broad strain range of 0% <= delta <= 5%. The moderate direct band gap, high transport property, dramatically high absorption from visible to the ultraviolet region, and extraordinary excitonic behavior of monolayer gamma-BTe, render it promising for next-generation optoelectronic and photovoltaic devices. By choosing monolayer GeP2 as a proper acceptor material, the practical upper limit of PCE for the heterobilayers of gamma-BTe/GeP2 reaches up to 21.76% (22.95% under strain), comparable to typical heterobilayer solar cells, making it a competitive donor material for photovoltaic device applications.