Extraction and Analysis of the Characteristic Parameters in Back-to-Back Connected Asymmetric Schottky Diode

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE(2020)

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摘要
The physical Schottky parameters of devices based on Schottky contact are important to analyze the working mechanism. This article theoretically studies the parameter characteristics of the current-voltage curve of two back-to-back connected Schottky contacts via the thermionic emission model, and it is found that not all the parameters are able to be extracted under some constraints. Compared with some classical extraction methods, a straightforward strategy to approach the Schottky intrinsic parameters by solving equations during the characteristic interval are presented. In addition, this method is verified on several representative standard curves and experimental curves, and the extracted parameters are highly compatible with those curves. The current extraction method will be of great significance for the design and preparation of Schottky-based devices.
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关键词
barrier height,ideality factor,Schottky devices,series resistance,thermionic emission theory
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