Back-Side-On-Box Heterogeneously Integrated Iii-V-On-Silicon O-Band Discrete-Mode Lasers

We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices producing on-chip powers of nearly 20 mW with Lorentzian linewidths below 20 kHz and a side mode suppression ratio of at least 60 dB. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement