Integration of III/V Hetero-Structures by Selective Area Growth on Si for Nano- and Optoelectronics

Selective area growth by metal organic vapor phase epitaxy of III/V nano ridges on patterned (001) Si substrates was investigated applying different growth conditions. The deposition of mismatched III/V materials in narrow oxide trenches leads to an efficient defect trapping at the trench side walls whereas the growth out of the trenches allows for a clear ridge formation with increased III/V volume. The ridge evolution depends strongly on the chosen growth parameters as well as mask pattern. InGaAs/GaAs and InGaP/GaAs hetero-structures were integrated on box shaped GaAs nano ridges in order to realize first laser device structures for optoelectronics on 300 mm Si substrate