Analysis of Phonon Modes and Electron–Phonon Interaction in Quantum-Cascade Laser Heterostructures

The phonon modes of quantum-cascade heterostructures based on binary and ternary semiconductor compounds are simulated. The dependences of the frequencies of the structure interface phonon modes on the wave vector in the layer plane and on the phase shift in the superlattice period are calculated. It is found that the range of variation in the quantum energy of phonon modes of the GaAs/Al 0.25 Ga 0.75 As structure does not exceed 2 meV. The calculated resulting interband scattering rate in the structure, taking into account the interface and confined modes, barely differs from that calculated in the bulk phonon approximation.