Resistive Switching with Bipolar Characteristics in TiN/Ti/HfO2/W Devices

S. Poblador,M. C. Acero,M. B. Gonzalez,F. Campabadal

Spanish Conference on Electron Devices（2017）

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摘要

In this work, TiN/Ti/HfO2/W devices have been fabricated and their resistive switching (RS) characteristics have been assessed. The analysis of the obtained results indicates an asymmetric bipolar RS behavior with two very well defined resistance states and good reliability in large sequences of DC voltage sweep and pulse-train cycles.

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关键词

bipolar resistive switching,conductive filament,HfO2,resistive random access memory

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