15nm-W-FIN High-Performance Low-Defectivity Strained-Germanium pFinFETs With Low Temperature STI-Last Process

An STI-last integration scheme was successfully developed to fabricate low-defectivity and dopant-controlled SiGe SRB /sGe Fins. For the first time, 15 nm fin-width SiGe SRB/highly-strained Ge pFinFETs are demonstrated down to 35 nm gate length. With a CETINV-normalized GM, SAT, INT of 6.7 nm.mS/mu m, the Si0.3Ge0.7 / sGe pFinFETs presented in this work improve the performance by similar to 90% as compared to the state-of-the-art relaxed-Ge FinFETs.