1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy

Momin Sailai,Qi Qi Lei,Abuduwayiti Aierken,Maliya Heini,Xiao Fan Zhao,Rui Ting Hao,Jing Hui Mo,Jie Guo,Yu Zhuang,Qi Guo

Thin Solid Films（2020）

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摘要

•GaInAsN material with 1 eV bandgap was studied under 1 meV electron irradiation.•GaInAsN PL (photoluminescence) intensity degraded seriously by irradiation.•PL enhancement phenomena were observed after rapid thermal annealing at 650 ∘C.•PL peak position red- and blue-shifted by irradiation and post annealing.

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关键词

Gallium indium arsenide nitride alloy,Electron irradiation,Photoluminescence,Thermal annealing,Arrhenius plot

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