Sub-Band-Gap Photoresponse Caused by Hot Electron Injections in Au Nanorod Decorated van der Waals Semiconductor Monolayers
JOURNAL OF THE KOREAN PHYSICAL SOCIETY(2020)
摘要
Hot electrons in metal nanostructures can be exploited in a wide range of optical functions, including photocatalysis, surface-enhanced Raman scattering, photodetectors and photovoltaics. Here, we report the sub-band-gap ( E g ) photoresponse in Au-nanorod decorated van der Waals ( vdW ) semiconductor, MoS 2 and WSe 2 , monolayers (MLs). We found that hot electrons, optically excited in Au nanorod (NR) arrays at sub- E g radiations, can be injected into vdW ML semiconductors over Schottky barriers, producing substantial photocurrents in n -type MoS 2 and p -type WSe 2 ML photodetectors, as well as photovoltages in n -MoS 2 / p -WSe 2 ML stack junctions. Moreover, by using spectrally and light-polarization resolved measurements, we showed that these sub- E g excitations of hot electrons can be modulated by tuning the plasmon resonance to the shape-controlled AuNRs.
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关键词
Plasmon,Nanostructure,van der Waals materials,2D materials,Photovoltaics
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