Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

IEEE Photonics Technology Letters(2020)

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摘要
This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.
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关键词
Mode-locked laser diode,monolithic integration,InP quantum dots
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