Design and Topology Considerations for a Family of X-Band GaN Power Amplifier MMICs
2019 IEEE 19th Mediterranean Microwave Symposium (MMS)(2019)
摘要
Transistor selection and power drive ratio considerations are critical in high power amplifier design. This work reports four high power amplifier MMICs operating at X-band, discusses two-stage and three-stage design approaches for various output power and efficiency goals while investigating the trade-off between them. All of the four MMICs are fabricated using NANOTAM's 0.25 μm GaN on SiC technology and measured on-wafer. Experimental results show that the first pair of power amplifiers with drive ratios of 1:4 achieve an output power of 13.2-16 W with power-added efficiency between 36.6-46.8%, while the second group of power amplifiers which have more conservative drive ratios of 2:4 are capable of higher output power between 14-18.1 W with lower power-added efficiency of 32.5-38.2 %, all recorded at 6 dB gain compression.
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关键词
gallium nitride,HEMT,drive ratio,X-band,high power amplifier,MMIC
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