Design And Validation Of Reliability Physics For Interconnect Architectures Induced From Inclusive Tm/Sm/Em Effects

Fan-out wafer/panel level package (FOWLP/FOPLP) technology has been demonstrated widely in wearable electronics and flexible hybrid electronics (FHE). Previously, electromigration (EM) mainly has been discussed on the related FOWLP/FOPLP interconnect architecture design in the past researches. However, considering current or future complex application domain including automobile electronics or flexible design even free form, the interconnect not only has been considered EM but also thermomigration (TM) and stressmigration (SM). In this research, experiments have been designed for comparing main contribution among stress, temperature, and electrical effects for future applications such as portable electric products and (FHE).