High Accurate Representation Of Turn-On Switching Characteristics By New Igbt And Fwd Compact Models For High Power Applications

In this paper, we report a newly developed the insulated gate bipolar transistor (IGBT) and the free-wheeling diode (FWD) compact models considered with bipolar carrier dynamics for prediction of power-loss and Electro-Magnetic-Interference (EMI) noise accurately. The capabilities of the proposed IGBT and FWD models considered with carrier dynamics are demonstrated by reproduction of the measured turn-on switching waveform for multiple external gate resistance (R-g) values. In addition, it is also demonstrated that the proposed models can be successfully utilized for different collector currents and temperature conditions with high convergence.