Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs D.S. Chao,H.Y. Shih, J.Y. Jiang,C.F. Huang, C.Y. Chiang, C.S. Ku, K.Y. LeeThe Japan Society of Applied Physics（2018）引用 0|浏览15暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
