Effect Of The Front And Back Illumination On Sub-Terahertz Detection Using N-Channel Strained-Silicon Modfets

Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz illumination. The response of the MODFET has been characterized using a two-tones solid-state continuous wave source at 0.15 and 0.30 THz. The DC drain-to-source voltage of 500-nm gate length transistors transducing the sub-THz radiation (photovoltaic mode) exhibited a non-resonant response in agreement with literature results. Two configurations of the illumination were investigated: (i) front side illumination in which the transistor was shined on its top side, and (ii) back illumination side where the device received the sub-THz radiation on its bottom side, i.e., on the Si substrate. Under excitation at 0.15 THz clear evidence of the coupling of terahertz radiation by the bonding wires was found, this coupling leads to a stronger response under front illumination than under back illumination. When the radiation is shifted to 0.3 THz, as a result of a lesser efficient coupling of the EM radiation through the bonding wires, the response under front illumination was considerably weakened while it was strengthened under back illumination. Electromagnetic simulations explained this behavior as the magnitude of the induced electric field in the channel of the MODFET was considerably stronger under back illumination.