Absolute surface energies of oxygen-adsorbed GaN surfaces

Takahiro Kawamura,Toru Akiyama,Akira Kitamoto,Masayuki Imanishi,Masashi Yoshimura,Yusuke Mori,Yoshitada Morikawa,Yoshihiro Kangawa,Koichi Kakimoto

Journal of Crystal Growth（2020）

引用 10|浏览22

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摘要

•Absolute surface energies of reconstructed GaN surfaces were examined.•First-principles calculations were employed for the calculations.•GaN surfaces under oxide vapor phase epitaxy (OVPE) growth were considered.•Surface orientation stability under the OVPE growth was investigated.

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关键词

A1. First-principles calculation,A1. Surface structure,A2. Oxide vapor phase epitaxy,B1. Nitrides,B2. Semiconducting III-V materials

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