Intersubband Transitions in GaN/Al 0.5 Ga 0.5 N Quantum Wells on a-Plane and m-Plane GaN Substrates

Jiaming Xu,Morteza Monavarian,Nishant Nookala,Micha N. Fireman,K. S. Qwah,James S. Speck,Mikhail A. Belkin

conference on lasers and electro optics（2020）

引用 0|浏览11

暂无评分

摘要

We experimentally characterize mid-infrared intersubband transitions in identical Al 0.5 Ga 0.5 N/GaN heterostructures grown on a- and m-plane GaN substrates. The absorption peaks of the m-plane samples are 10 to 40% narrower than that of the a-plane samples.

查看译文

关键词

quantum wells,m-plane GaN substrates,mid-infrared intersubband transitions,a-plane GaN substrates,GaN-Al0.5Ga0.5N,GaN

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要