Voltage-Controlled Long-Range Transport of Indirect Excitons in MoSe 2 /WSe 2 Van der Waals Heterostructure

L. H. Fowler-Gerace, D. J. Choksy,L. V. Butov

conference on lasers and electro optics（2020）

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摘要

We observe transport of indirect excitons over a distance greater than 10 μm in a MoSe 2 /WSe 2 heterostructure. The transport is switched on or off by gate voltage and is observed up to 40 K.

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关键词

voltage-controlled long-range transport,indirect excitons,gate voltage,van der Waals heterostructure,temperature 40.0 K,MoSe2-WSe2

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