Narrow Linewidth Photoluminescence from Top-Down Fabricated 20 nm InGaN/GaN Quantum Dots at Room Temperature
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2020）
Abstract
Promising narrow linewidth photoluminescence with a FWHM of 7.1 nm at wavelength 418 nm was achieved at room temperature from InGaN/GaN quantum dots in a 20-nm-diameter top-down fabricated nanowire. (C) 2020 The Author(s)
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Key words
ingan/gan quantum dots,narrow linewidth photoluminescence,quantum dots,nm ingan/gan,top-down
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