Towards A Hexagonal Sige Semiconductor Laser.

M. A. J. V. Tilburg,A. Dijkstra,E. M. T. Fadaly, V. T. V. Lange,M. A. Verheijen, J. R. Suckert,C. Rodl,J. Furthmuller,F. Bechstedt,S. Botti, D. Busse,J. J. Finley,E. P. A. M. Bakkers,J. E. M. Haverkort

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2020）

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摘要

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5 mu m. (c) 2020 The Author(s)

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hexagonal sige semiconductor laser

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