Shallow-Mesa Inp Avalanche Photodiode With Ultralow Dark Current

Jingchang Zhang,Yaru Han,Bing Xiong,Yi Luo,Changzheng Sun,Lai Wang,Jian Wang,Yanjun Han,Zhibiao Hao,Hongtao Li,Jiadong Yu

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2020）

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摘要

A shallow-mesa InP avalanche photodiode is proposed and fabricated by a simple dry etching process. The device exhibits a remarkably low dark current of 4 pA at unit gain and a high gain of 320. (C) 2020 The Author(s)

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关键词

shallow-mesa InP avalanche photodiode,ultralow dark current,unit gain,dry etching,current 4.0 pA,InP

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