Ingan-Based Lasers With An Inverted Ridge Waveguide Heterogeneously Integrated On Si(100)

Highly efficient electrically injected light source on exact Si(100) has been the bottleneck of Si photonics for decades. InGaN-based laser with a direct bandgap may serve as an efficient on-chip light source. But InGaN-based laser with a p-side ridge waveguide usually has a large electrical resistance and operation voltage, converting electricity into excessive Joule heat. The low wall plug efficiency, together with a large thermal resistance, leads to a high junction temperature, severely degrading device performance. Here, we proposed and fabricated a new laser structure with the ridge waveguide inverted from p-side to n-side. The differential electrical resistance and threshold voltage were slashed by 48% and 1.4 V, respectively. The thermal resistance and junction temperature were also reduced by 8 K/W and 25 degrees C, respectively. As a result, InGaN-based laser on exact Si(100) has been demonstrated under room-temperature continuous-wave current injection, which is fully compatible with Si-based microelectronics and a photonics platform.