Thermal Model Development For Sic Mosfets Robustness Analysis Under Repetitive Short Circuit Tests

M. Pulvirenti, D. Cavallaro, N. Bentivegna,S. Cascino,E. Zanetti,M. Saggio

2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE)（2020）

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摘要

The aim of this paper is to analyze the SiC MOSFETs behavior under repetitive short circuit tests. In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions supported and compared by means of a robust physical model developed by Finite Element Approach (FEA) and Failure Analysis (FA).

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关键词

Silicon Carbide (SiC), Semiconductor device, Short Circuit Test (SCT), Finite Element Method (FEM)

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