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A Wideband Variable-Gain Amplifier with a Negative Exponential Generation in 40-Nm CMOS Technology

Radio Frequency Integrated Circuits Symposium (RFIC)(2020)

Nanyang Technol Univ

Cited 5|Views31
Abstract
A wideband variable-gain amplifier (VGA) with a negative exponential generation using 40 nm CMOS technology is reported. By compensating a single-branch negative exponential generator (NEG) which features a composite of dual Taylor series, the proposed negative exponential generation further extends the dB-linear range. The measurement results show the overall VGA achieves a dB-linear range of 51 dB (-34 ~ 17dB) with a gain error less than ± 1 dB. In addition, the bandwidth is around 7 GHz under different gain settings. The core circuit draws 24.6 mA current from a 1.1 V power supply (excluding the output buffer) and occupies an active area of 0.038 mm 2 .
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Variable-gain amplifier,negative exponential generator,gain error compensation,Taylor series,dB-linear,wideband
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要点】:本文报道了一种采用40纳米CMOS技术的宽带可变增益放大器(VGA),其通过负指数生成技术扩展了dB线性范围,实现了低增益误差和小尺寸设计。

方法】:文中提出的方法利用补偿单分支负指数生成器(NEG),该生成器结合了双泰勒级数,有效扩展了VGA的dB线性范围。

实验】:实验结果显示,所提出的VGA在-34至17dB的范围内具有51dB的dB线性范围,增益误差小于±1dB,带宽约为7GHz。核心电路在1.1V电源下消耗24.6mA电流(不包括输出缓冲器),占用面积为0.038平方毫米。数据集名称在文中未提及,因此未提供。