A 120-Mw, Q-Band Inp Hbt Power Amplifier With 46% Peak Pae

Andrea Arias-Purdue,Petra Rowell,Miguel Urteaga,Keisuke Shinohara,Andy Carter, Josh Bergman,Kang Ning,Mark Rodwell,James Buckwalter

PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)（2020）

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摘要

We present a record collector efficiency (54%) and PAE (46%) at 47 GHz for a 250-nm InP HBT power amplifier (PA). Reactively tuned transistor cells using a multi-section hybrid distributed-lumped matching network realize high PAE. The reported PA delivers up to 120 mW at 47 GHz while operating from a 2.75 V power supply. The measured PAE is the highest reported at 47 GHz.

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关键词

millimeter-wave, power amplifier, Q-band, InP, HBT, PAE, MMIC

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