Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes

β-Ga2O3 is an emerging ultra-wide-bandgap semiconductor material offering superior power material limits over Si, SiC, and GaN as well as the availability of large-diameter wafers growing from its own melt. However, β-Ga2O3 devices performance may be limited by the relatively poor thermal conductivity of the material.