High Output Power Ultra-Wideband Distributed Amplifier In Inp Dhbt Technology Using Diamond Heat Spreader

PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)(2020)

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摘要
This work reports on a highly linear and high output power ultra-wideband distributed amplifier with improved thermal properties using a diamond layer for heat spreading. The performances of a circuit with and without the diamond heat spreader are compared. Adding the diamond yields a 4 dB improvement in 1 dB compression point (P-1dB) and saturated output power (P-sat). Intermodulation distortion has also been measured and the amplifier achieves 24 dBm OIP3 over a bandwidth larger than 60 GHz. In terms of small-signal characteristics, the circuit shows 12 dB gain and low deviation from linear phase, similarly to the non-diamond version. This amplifier demonstrates highest P-1dB, OIP3, and PAE values as compared to other technologies with similar or higher bandwidth.
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关键词
distributed amplifier, InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), travelling wave amplifier
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