Mechanism for Unipolar Reset in Negative Thermophoresis Resistive Memory Devices

Resistive switching behavior has been experimentally observed in Hafnia-based unipolar memory devices with negative thermophoresis. The traditional mechanism of RESET where the vacancy moves away from the filament fails to explain the reset behavior in these devices. We propose a model for RESET that involves diffusion of oxygen interstitials to break the vacancy-based filament in a region close to the top electrode as opposed to the center of the filament. Using Monte Carlo simulations, we establish the validity of the mechanism and show that it can model SET and retention.