JFET (Si,SiC, GaAs) Compensating Voltage Regulators for the Operation with Sensor Interfaces of Physical Quantities at Low Temperatures

A new architecture of the compensating voltage regulator (CVR) without current mirrors is presented, which can be implemented on the single-type silicon (Si), silicon carbide (SiC) or gallium arsenide (GaAs) JFETs. The use of Si, SiC and GaAs technologies makes it possible to ensure reliable operation of the CVR in severe operating conditions at a low noise level. The computer simulation results show that the proposed Si JFET CVR performs (due to new circuitry) its main functions in the cryogenic temperature range and it is characterized by the resistance to the penetrating radiation.