Effect of Ge nanolayer stacking order on performance of CZTSSe thin film solar cells

Byeong Hoon Lee,Kuldeep Singh Gour,Vijay Karade,Jun Sung Jang,Jihun Kim,Eunae Jo,Myeng Gil Gang,Dong Min Lee,In Jae Lee,Jongsung Park,Jin Hyeok Kim

Materials Letters（2021）

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摘要

•Effect of Ge staking order on optoelectronic properties of CZTSSe thin films were investigated.•Ge-doping improves absorber quality, elemental distribution, and reduces SnSe2 phases.•Ge layer on top shows an improved open-circuit voltage of 480 mV.•An optimized device with Ge at the bottom showed improved PCE from 6.91% to 7.87%.

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关键词

Ge doping,CZTSSe,Kesterite,Thin films,Sputtering,Solar cells

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