A Cost-Effective Embedded Nonvolatile Memory with Scalable LEE Flash®-G2 SONOS for Secure IoT and Computing-in-Memory (CiM) Applications
2020 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)（2020）
摘要
We introduce a cost-effective, reliable and energy efficient embedded flash memory technology and its applications. A charge trapping type of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) with twin select-gates structure has been demonstrated on 55-nm bulk CMOS technology. It is potentially scalable on advanced fully depleted (FD)-SOI or 3D Fin-FET devices below 28-nm node. Those feasibilities are shown by TCAD simulations and existing 55-nm planar bulk silicon data. Secure and low-power applications are introduced that are using nonvolatile (NV)-SRAM by combining with SRAM cell and flash cell. Besides, analog computing-inmemory (CiM) based on flash is also introduced for energy efficient artificial intelligence (AI) applications in edge computing.
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关键词
energy efficient embedded flash memory technology,Silicon-Oxide-Nitride-Oxide-Silicon,twin select-gates structure,bulk CMOS technology,advanced fully depleted-SOI,3D Fin-FET devices,low-power applications,nonvolatile-SRAM,CiM,energy efficient artificial intelligence applications,cost-effective embedded nonvolatile memory,scalable LEE flash,G2 SONOS,secure IoT,computing-in-memory applications,planar bulk silicon data,size 28 nm,size 55 nm
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