A Radiation-Hardened Readout Integrated Circuits for Sensor Systems

Radiation-hardened IA and ADC circuits are essential for a safe and efficient sensor system. In this paper, three-op-amp IA and SAR ADC were designed using radiation-hardened techniques and measured and proved to be robust to TID and SEE. Both Radiation-hardened IA and ADC were fabricated in a 65nm CMOS process and measured in an ARTI high-level radiation environment. The proposed IA was able to confirm that the voltage gain was accurate against TID effects in the harsh radiation environment. The proposed ADC obtained 9.59 ENOB at 5.54mW power consumption.