Novel Radiation Hardened Memory Cell Design for Nanometer Technology

international conference on solid state and integrated circuits technology（2020）

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摘要

In this paper, a novel radiation hardened memory cell (RH-10T) using 10 transistors is proposed to tolerate single event upset for nanometer technology. Simulation results have indicated that the proposed RH-10T cell has high reliability, small read and write access time and acceptable power consumption.

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关键词

nanometer technology,RH-10T cell,novel radiation hardened memory cell design,single event

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