Telecom-Wavelength Inas Qds With Low Fine Structure Splitting Grown By Droplet Epitaxy On Gaas(111)A Vicinal Substrates

We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed on the quantum dot from the surface, allows a fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100nm InAlAs metamorphic layer with In content>= 50% directly deposited on the GaAs substrate is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 mu m telecom O-band with fine structure splitting as low as 16 mu eV, thus making them suitable as photon sources in quantum communication networks using entangled photons.