Comparison Of The Impact Of Nonlinearity In A P-I-N And An Mutc Photodetector On Electro-Optic Frequency Combs

We calculate the impact of nonlinearity in both a p-i-n photodetector (PD) and a modified uni-traveling carrier (MUTC) PD on an RF-modulated frequency comb generated using 100-fs optical pulses with a 50-MHz repetition rate. We take into account bleaching (nonlinear saturation) that is due to the high peak-to-average-power ratio and contributes to the device nonlinearity. Nonlinear impairment of an RF-modulated continuous wave is typically characterized by the second- and third-order intermodulation distortion products (IMD2 and IMD3). In contrast, an RF-modulated frequency comb must be characterized by a distinct IMD2(n) and IMD3(n) for each comb line n. We calculate IMD2(n) and IMD3(n) in both p-i-n and MUTC PDs and compare the results. We also calculate the ratio of the IMD2(n) power and the IMD3(n) power to the fundamental power S-in in both p-i-n and MUTC PDs. We find that nonlinear distortion has a greater impact at high frequencies in the MUTC PD than in the p-i-n PD. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement