Evidence Of Buried Junction In Cdsete Absorbers
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)(2020)
摘要
The introduction of Se induced band gap gradients have been shown to be a promising path for improving CdTe devices. Controlling maximum selenium concentration during deposition should allow for better device performance. In this work electron beam induced current maps were measured for CdSeTe/CdTe devices with as-grown selenium concentration between 0 and 20 percent. Results show a collection profile which has not been seen before in similar devices. EBIC results and several interpretations are presented.
更多查看译文
关键词
Thin Film Devices, CdSeTe solar cell, EBIC, Recombination, Carrier collection, Graded absorber, Cadmium, Tellurium, Selenium
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要