Single-Event Latchup in a 7-nm Bulk FinFET Technology
IEEE Transactions on Nuclear Science(2021)
摘要
Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltages and temperatures for this technology node. SEL data is analyzed to determine the holding voltage (VHOLD) required to sustain SEL, which can be as low as 0.85 V at elevated temperatures. Such low SEL holding voltage within 100 mV of nominal supply voltage poses a major reliability threat.
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关键词
Alpha particles,bulk FinFET,complementary metal-oxide-semiconductor (CMOS),cross section,holding voltage,latchup,neutron,radiation effects,single-event effects,single-event latchup (SEL),technology computer-aided design (TCAD),temperature
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