Indium oxide nanoparticles for resistive RAM integration using a compatible industrial technology

In this work we report on the integration of indium oxide (In2O3) nanoparticles (NPs) for Resistive Random Access Memory (RRAM) applications. This low-temperature integration process is fully compatible CMOS Back-End integration given a carefull selection of materials deposited by MOCVD and ALD. A detailed description of the process is provided together with AFM analysis performed on the indium oxide nanoparticles and TEM cross-sections on the whole stack. It is shown that the introduction of In2O3 NPs provides bipolar switching behavior together with promising electrical performances in terms of large OFF/ON resistance ratio (10(6)) and retention time at room temperature.