Electric Field Ionization Of Boron Acceptors In Single-Crystalline Diamond

I. V. Altukhov,M. S. Kagan,S. K. Paprotskiy, N. A. Khvalkovskiy,N. B. Rodionov,A. P. Bol’shakov,V. G. Ral’chenko, R. A. Khmel’nitskiy

LOW TEMPERATURE PHYSICS（2021）

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摘要

Vertical hole transport in single-crystalline diamond films with ohmic and Schottky contacts was studied at dc and pulsed electric fields up to similar to 5.10(5) V/cm. Conductivity mechanisms at different fields were identified. The concentrations of free carriers (holes) and acceptors were determined. The hole recombination time at boron acceptors has been estimated. The mechanisms of electric field ionization of boron acceptors are discussed.

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关键词

single-crystalline diamond, boron acceptors, electric field ionization

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