Negative feedback idea-based memristor resistance value state control circuit

The invention provides a memristor resistance value state control circuit structure which comprises a first current negative feedback operational amplifier, a second current negative feedback operational amplifier, a sine-wave generator, an envelope detection unit, a memristor with the resistance value state to be adjusted, a first resistor, a second resistor, a third resistor, a fourth resistor and a fifth resistor, wherein the first current negative feedback operational amplifier is used for controlling the resistance value; the second current negative feedback operational amplifier is used for carrying out voltage subtraction calculation; the sine-wave generator is used for providing the needed input signals; the envelope detection unit comprises a first diode and a capacitor and is used for extracting the maximum value of sinusoidal voltage; and the memristor with the resistance value state to be adjusted is connected between a negative input end of the first current negative feedback operational amplifier and an output end of the first current negative feedback operational amplifier in series, and the final resistance value state of the memristor is decided by the input control voltage. The memristor resistance value state control circuit structure utilizes the negative feedback ideal, improves the control accuracy of memristor resistance value state, and has good circuit size and resistance value control speed.