Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes

Binbin Zhu,Zi-Hui Zhang,Swee Tiam Tan,Shunpeng Lu,Yiping Zhang,Xuejun Kang,Ning Wang,Namig Hasanov,Hilmi Volkan Demir

Physica E: Low-dimensional Systems and Nanostructures（2018）

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摘要

•The depletion length of p-njunction is decreased.•The acceptor concentration is relatively increased.•Both the electricalperformance and thermal stability are improved.

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