Strengthened Magnetoelectric Coupling in Pb(Zr0.52Ti0.48)O3/Ni Composite Through Interface Modification with LaNiO3 Buffer Layer

The direct magnetoelectric (ME) coupling of Pb(Zr0.52Ti0.48)O3/LaNiO3/Ni (PZT/LNO/Ni) heterostructure was studied, which is prepared with the combination of sol–gel spin-coating method (for PZT) and off-axis magnetron sputtering (for LNO). LNO served as the buffer layer for the ferroelectric film and effective stress transfer can be realized between Ni foil and PZT film. Structural and morphological characterization was carried out for the as-grown PZT/LNO/Ni film-electrode-substrate heterostructure. Well-defined ferroelectric and magnetic hysteresis loops demonstrated the good ferroelectric and magnetic property. A large voltage ME coefficient of 560 mV cm− 1 Oe− 1 was observed at the relatively low bias magnetic field (Hdc) (~ 65 Oe) with LNO buffer layer thickness of ~ 15 nm in PZT/LNO/Ni heterostructures, which is 2 times higher than that observed in the PZT/Ni composite and provides great opportunities for the new generation sensor apparatuses that depend on direct ME effect. The results indicated the strain-mediated magnetoelectric coupling between ferroelectric PZT film and magnetic Ni foil.