Atomic and Electronic Structure of SiO x Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS(2021)
摘要
The silicon oxide thin films obtained by thermal SiO 2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO 2 , the more so the longer the treatment time. The atomic structure of the SiO x < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.
更多查看译文
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要